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2SD2499. D2499 Datasheet

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2SD2499. D2499 Datasheet
















D2499 2SD2499. Datasheet pdf. Equivalent













Part

D2499

Description

2SD2499



Feature


2SD2499 TOSHIBA TRANSISTOR SILICON NPN T RIPLE DIFFUSED MESA TYPE 2SD2499 HORIZ ONTAL DEFLECTION OUTPUT FOR COLOR TVs Unit: mm z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE (sat ) = 5 V (Max.) z High Speed :: tf = 0 .3 μs (Typ.) z Built-in Damper Type z Collector Metal (Fin) is Fully Covere d with Mold Resin. ABSOLUTE MAXIMUM RA TINGS (Tc = 25°C) .
Manufacture

Toshiba Semiconductor

Datasheet
Download D2499 Datasheet


Toshiba Semiconductor D2499

D2499; CHARACTERISTIC SYMBOL RATING UNIT Co llector−Base Voltage VCBO 1500 V Collector−Emitter Voltage VCEO 600 V Emitter−Base Voltage VEBO 5 V DC IC 6 Collector Current A Pulse ICP 12 Base Current IB 3 A JEDE C ― Collector Power Dissipation PC 50 W JEITA ― Junction Temperatu re Storage Temperature Range Tj 150 °C Tstg −55~150 °C TOSHI.


Toshiba Semiconductor D2499

BA 2-16E3A Weight: 5.5 g (typ.) Note: Using continuously under heavy loads ( e.g. the application of high temperatu re/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliab ility significantly even if the operati ng conditions (i.e. operating temperat ure/current/voltage, etc.) are within t he absolute maximu.


Toshiba Semiconductor D2499

m ratings. Please design the appropriat e reliability upon reviewing the Toshib a Semiconductor Reliability Handbook ( “Handling Precautions”/Derating Con cept and Methods) and individual reliab ility data (i.e. reliability test repor t and estimated failure rate, etc). E QUIVALENT CIRCUIT MARKING D2499 Part No. (or abbreviation code) Lot No. A l ine indicates lead (Pb.





Part

D2499

Description

2SD2499



Feature


2SD2499 TOSHIBA TRANSISTOR SILICON NPN T RIPLE DIFFUSED MESA TYPE 2SD2499 HORIZ ONTAL DEFLECTION OUTPUT FOR COLOR TVs Unit: mm z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE (sat ) = 5 V (Max.) z High Speed :: tf = 0 .3 μs (Typ.) z Built-in Damper Type z Collector Metal (Fin) is Fully Covere d with Mold Resin. ABSOLUTE MAXIMUM RA TINGS (Tc = 25°C) .
Manufacture

Toshiba Semiconductor

Datasheet
Download D2499 Datasheet




 D2499
2SD2499
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD2499
HORIZONTAL DEFLECTION OUTPUT FOR COLOR
TVs
Unit: mm
z High Voltage
: VCBO = 1500 V
z Low Saturation Voltage : VCE (sat) = 5 V (Max.)
z High Speed
:: tf = 0.3 μs (Typ.)
z Built-in Damper Type
z Collector Metal (Fin) is Fully Covered with Mold Resin.
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
VCBO
1500
V
CollectorEmitter Voltage
VCEO
600
V
EmitterBase Voltage
VEBO
5
V
DC
IC
6
Collector Current
A
Pulse
ICP
12
Base Current
IB
3
A
JEDEC
Collector Power Dissipation
PC
50
W
JEITA
Junction Temperature
Storage Temperature Range
Tj
150
°C
Tstg
55~150
°C
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
D2499
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-22




 D2499
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
EmitterBase Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Forward Voltage
(Damper Diode)
Transition Frequency
Collector Output Capacitance
Switching Time (Fig. Storage Time
1)
Fall Time
ICBO
IEBO
V (BR) EBO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 1500 V, IE = 0
VEB = 5 V, IC = 0
IC = 400 mA, IB = 0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 4 A
IC = 4A, IB = 0.8 A
IC = 4 A, IB = 0.8 A
VF
IF = 6 A
fT
VCE = 10 V, IC = 0.1 A
Cob
VCB = 10 V, IE = 0, f = 1 MHz
tstg
ICP = 4 A, IB1 (end) = 0.8 A
tf
fH = 15.75 kHz
Fig. 1 SWITCHING TIME TEST CIRCUIT
2SD2499
MIN TYP. MAX UNIT
1
mA
67
200 mA
5
V
8
25
5
9
5
V
1.05 1.3
V
1.6
2.0
V
2
MHz
95
pF
7.5
11
μs
0.3
0.6
2
2006-11-22




 D2499
2SD2499
3
2006-11-22




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