isc N-Channel MOSFET Transistor
FEATURES · Static drain-source on-resistance:
RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRITION · Switching power supplies,converters,AC and DC motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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