40N10 Transistor Datasheet

40N10 Datasheet, PDF, Equivalent


Part Number

40N10

Description

N-Channel MOSFET Transistor

Manufacture

Inchange Semiconductor

Total Page 2 Pages
Datasheet
Download 40N10 Datasheet


40N10
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
40N10
·FEATURES
·Drain Current ID= 40A@ TC=25
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
±30
V
V
ID Drain Current-Continuous
40 A
IDM Drain Current-Single Plused
100 A
PD Total Dissipation @TC=25
150 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
0.833 /W
Thermal Resistance, Junction to Ambient 62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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40N10
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
40N10
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS= 40A ;VGS= 0
VGS= 10V; ID= 20A
VGS= ±20V;VDS= 0
VDS=80V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=20A;
VDD=50V;
RL=2.5Ω
MIN TYPE MAX UNIT
100 V
2.0 4.0 V
3.0 V
0.04 Ω
±500 nA
1 µA
5000
1000 pF
2500
30
17
ns
20
42
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Features INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 40N10 ·FEATURES ·Drain Current ID = 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Sourc e On-Resistance : RDS(on) = 0.04Ω(Max) ·Fast Switching ·APPLICATIONS ·Swit ching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VDSS VGS Drain-Source Volta ge Gate-Source Voltage-Continuous 100 ±30 V V ID Drain Current-Continuous 40 A IDM Drain Current-Single Plused 100 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temp erature 150 ℃ Tstg Storage Temperatu re -55~150 ℃ ·THERMAL CHARACTERIST ICS SYMBOL PARAMETER MAX UNIT Rth j -c Rth j-a Thermal Resistance, Junctio n to Case 0.833 ℃/W Thermal Resista nce, Junction to Ambient 62.5 ℃/W is c website:www.iscsemi.cn 1 isc & isc semi is registered trademark PDF pdfFa ctory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc P.
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