MOSFET Transistor. 80N06 Datasheet

80N06 Datasheet PDF, Equivalent


Part Number

80N06

Description

N-Channel MOSFET Transistor

Manufacture

Inchange Semiconductor

Total Page 2 Pages
PDF Download
Download 80N06 Datasheet PDF


80N06 Datasheet
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
80N06
·DESCRIPTION
·Drain Current ID= 80A@ TC=25
·Drain Source Voltage-
: VDSS= 60V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
60
±30
80
V
V
A
ID(puls)
Pulse Drain Current
320 A
Ptot Total Dissipation@TC=25
150 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.0 /W
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80N06 Datasheet
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
80N06
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS=80A ;VGS= 0
VGS= 10V; ID=40A
VGS= ±20V;VDS= 0
VDS= 60V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=80A;
VDD=48V;
RG=50Ω
MIN TYPE MAX UNIT
60 V
2.0 4.0 V
1.5 V
0.01 Ω
±100 nA
250 µA
5900
230 pF
900
200
42
ns
230
46
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Features Datasheet pdf INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 80N06 ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Volta ge- : VDSS= 60V(Min) ·Fast Switching S peed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RAT INGS(TC=25℃) SYMBOL PARAMETER VALU E UNIT VDSS Drain-Source Voltage (VG S=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 60 ±30 80 V V A ID(puls) Pulse Drain Curren t 320 A Ptot Total Dissipation@TC=25 150 W Tj Max. Operating Junction T emperature 150 ℃ Tstg Storage Temper ature Range -55~150 ℃ ·THERMAL CHA RACTERISTICS SYMBOL PARAMETER Rth j- c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website:www. iscsemi.cn 1 isc & iscsemi is register ed trademark PDF pdfFactory Pro www.f ineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRIC AL CHARACTERISTICS (TC=25℃) isc Prod uct Specification 80N06 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th.
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