isc Silicon NPN Power Transistor
2SC2911
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1209 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-voltage switching and AF 100W predriver
applications.
A...
