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IRFR430
Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7 IRFR430 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 1.169Ω (Typ.) BVDSS = 500 V RDS(on) = 1.5Ω ID = 3.5 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings S...
Fairchild Semiconductor
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