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HVV1012-250

HVVi
Part Number HVV1012-250
Manufacturer HVVi
Description Power Transistor
Published Aug 11, 2016
Detailed Description The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transist...
Datasheet PDF File HVV1012-250 PDF File

HVV1012-250
HVV1012-250

Overview
The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications.
MODE FREQUENCY (MHz) VDD (V) IDQ Power GAIN EFFICIENCY IRL (mA) (W) (dB) (%) (dB) Class AB 1150 50 100 250 1...


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