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HVV1214-025

ASI
Part Number HVV1214-025
Manufacturer ASI
Description RF transistor
Published Aug 11, 2016
Detailed Description >LL'('*#&(+ 25 Watts, 50V, 1200-1400MHz 200!s, 10% Duty DESCRIPTION The high power HVV1214-025 device is a high voltag...
Datasheet PDF File HVV1214-025 PDF File

HVV1214-025
HVV1214-025

Overview
>LL'('*#&(+ 25 Watts, 50V, 1200-1400MHz 200!s, 10% Duty DESCRIPTION The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200 MHz and 1400 MHz.
FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 95 -10, 10 2 116 -65 to +150 200 Unit V V A W °C °C THERMAL CHARACTERISTICS Symbol Parameter 1 JC Thermal Resistance Max 1.
5 Unit °C/W PACKAGE The device resides in the ...


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