Complementary Transistors. NTE254 Datasheet

NTE254 Transistors. Datasheet pdf. Equivalent

Part NTE254
Description Silicon Complementary Transistors
Feature NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Descriptio.
Manufacture NTE
Datasheet
Download NTE254 Datasheet

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Recommendation Recommendation Datasheet NTE254 Datasheet





NTE254
NTE253 (NPN) & NTE254 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126
type case designed for general–purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A
D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.23°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO IC = 50mA, IB = 0, Note 1
ICEO VCE = 80V, IB = 0
ICBO VCE = 80V, IE = 0
VCE = 80V, IE = 0, TC = +100°C
IEBO VBE = 5V, IC = 0
80
–– V
– 100 µA
– 100 µA
– 500 µA
– 2.0 mA



NTE254
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
NTE253
NTE254
NTE253 & NTE253
CollectorEmitter Saturation Voltage
NTE253
NTE254
NTE253 & NTE254
BaseEmitter ON Voltage
NTE253
NTE254
NTE253 & NTE254
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
IC = 1.5A, IB = 30mA
IC = 2.0A, IB = 40mA
IC = 4.0A, IB = 40mA
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2.0A
VCE = 3V, IC = 4.0A
750 2000
750 2000
100
– – 2.5
– – 2.8
3.0
– – 2.5
– – 2.5
– – 3.0
V
V
V
V
V
V
SmallSignal Current Gain
|hfe| VCE = 3V, IC = 1.5A, f = 1MHz
1.0
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%
Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and
NTE254 (PNP).
NTE253
C
B
.450
(11.4)
Max
.330 (8.38)
Max
.175
(4.45)
Max
E
NTE254
C
B
E
.655
(16.6)
Max
EC B
.118 (3.0)
Dia
.030 (.762) Dia
.130 (3.3)
Max
.090 (2.28)





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