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ICE47N65W

Micross Components
Part Number ICE47N65W
Manufacturer Micross Components
Description N-Channel MOSFET
Published Sep 24, 2016
Detailed Description ICE47N65W N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability Hig...
Datasheet PDF File ICE47N65W PDF File

ICE47N65W
ICE47N65W

Overview
ICE47N65W N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 1mA VGS = 10V VDS = 480V 47A 650V 0.
063Ω 187nC Pin Description: TO-247 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 47 117 1600 24 50 ±20 ±30 417 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 24A Limited by Tjmax VDS = 480V, ID = 47A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 3 & ...


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