DatasheetsPDF.com

NPN Transistors. BD437G Datasheet

DatasheetsPDF.com

NPN Transistors. BD437G Datasheet






BD437G Transistors. Datasheet pdf. Equivalent




BD437G Transistors. Datasheet pdf. Equivalent





Part

BD437G

Description

Plastic Medium-Power Silicon NPN Transistors



Feature


BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors Th is series of plastic, medium−power si licon NPN transistors can be used for a mplifier and switching applications. Fe atures • Complementary Types are BD43 8 and BD442 • These Devices are Pb− Free and are RoHS Compliant* MAXIMUM R ATINGS Rating Symbol Value Unit Co llector−Emitter Voltage BD.
Manufacture

ON Semiconductor

Datasheet
Download BD437G Datasheet


ON Semiconductor BD437G

BD437G; 435G BD437G BD439G BD441G VCEO 32 45 6 0 80 Vdc Collector−Base Voltage BD4 35G BD437G BD439G BD441G VCBO 32 45 6 0 80 Vdc Emitter−Base Voltage Colle ctor Current Base Current Total Device Dissipation @ TC = 25°C Derate above 2 5°C VEBO 5.0 Vdc IC 4.0 Adc IB 1. 0 Adc PD 36 W 288 W/°C Operating and Storage Junction Temperature Range TJ , Tstg – 55 to + 150 °C .


ON Semiconductor BD437G

Stresses exceeding those listed in the Maximum Ratings table may damage the de vice. If any of these limits are exceed ed, device functionality should not be assumed, damage may occur and reliabili ty may be affected. THERMAL CHARACTERI STICS .


ON Semiconductor BD437G

.

Part

BD437G

Description

Plastic Medium-Power Silicon NPN Transistors



Feature


BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors Th is series of plastic, medium−power si licon NPN transistors can be used for a mplifier and switching applications. Fe atures • Complementary Types are BD43 8 and BD442 • These Devices are Pb− Free and are RoHS Compliant* MAXIMUM R ATINGS Rating Symbol Value Unit Co llector−Emitter Voltage BD.
Manufacture

ON Semiconductor

Datasheet
Download BD437G Datasheet




 BD437G
BD435G, BD437G, BD439G,
BD441G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors can be
used for amplifier and switching applications.
Features
Complementary Types are BD438 and BD442
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD435G
BD437G
BD439G
BD441G
VCEO
32
45
60
80
Vdc
Collector−Base Voltage
BD435G
BD437G
BD439G
BD441G
VCBO
32
45
60
80
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEBO
5.0
Vdc
IC 4.0 Adc
IB 1.0 Adc
PD
36 W
288 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
3.5
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17
1
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
123
MARKING DIAGRAM
YWW
BD4xxG
Y
WW
BD4xx
G
= Year
= Work Week
= Device Code
xx = 35, 37, 37T, 39, 41
= Pb−Free Package
ORDERING INFORMATION
Device
BD435G
BD437G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
BD437TG
BD439G
TO−225
(Pb−Free)
TO−225
(Pb−Free)
50 Units/Rail
500 Units/Box
BD441G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
BD437/D




 BD437G
BD435G, BD437G, BD439G, BD441G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Collector−Emitter Breakdown Voltage
(IC = 100 mA, IB = 0)
BD435G
BD437G
BD439G
BD441G
V(BR)CEO
32
45
60
80
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mA, IB = 0)
BD435G
BD437G
BD439G
BD441G
V(BR)CBO
32
45
60
80
Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCB = 32 V, IE = 0)
BD435G
(VCB = 45 V, IE = 0)
BD437G
(VCB = 60 V, IE = 0)
BD439G
(VCB = 80 V, IE = 0)
BD441G
V(BR)EBO
5.0
Vdc
ICBO
mAdc
− − 0.1
− − 0.1
− − 0.1
− − 0.1
Emitter Cutoff Current
(VEB = 5.0 V)
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BD435G
BD437G
BD439G
BD441G
IEBO
mAdc
− 1.0
hFE
40 −
30 −
20 −
15 −
DC Current Gain
(IC = 500 mA, VCE = 1.0 V)
BD435G
BD437G
BD439G, BD441G
hFE
85
85
40
− 475
− 375
− 475
DC Current Gain
(IC = 2.0 A, VCE = 1.0 V)
BD435G
BD437G
BD439G
BD441G
hFE
50 −
40 −
25 −
15 −
Collector Saturation Voltage
(IC = 2.0 A, IB = 0.2 V)
BD435G
(IC = 3.0 A, IB = 0.3 A)
BD437G, BD439G, BD441G
VCE(sat)
Vdc
− 0.5
− 0.8
Base−Emitter On Voltage
(IC = 2.0 A, VCE = 1.0 V)
VBE(on)
Vdc
− 1.1
Current−Gain − Bandwidth Product
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)
fT
3.0 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2




 BD437G
BD435G, BD437G, BD439G, BD441G
2.0
1.6
IC = 10 A
1.2
100 mA
1.0 A
3.0 A
0.8
TJ = 25°C
0.4
0
0.05 0.070.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20
Figure 1. Collector Saturation Region
30
50 70 100
200 300 500
200
180
160
140
120
100
80
60
40
20
0
0.01
0.02 0.03 0.05
BD439, 441
BD433, 435, 437
0.1
0.2 0.3
0.5
IC, COLLECTOR CURRENT (AMP)
Figure 2. Current Gain
1
23
5
2.0
TJ = 25°C
1.6
1.2
0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.6
VCE(sat) @ IC/IB = 10
0
0.0050.01 0.02 0.030.05 0.1 0.20.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltage
10
4.0 5 ms
TJ = 150°C
dc
1.0 SECONDARY BREAKDOWN
THERMAL LIMIT TC = 25°C
0.5 BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
BD437
BD439
BD441
0.1
1.0 2.0
5.0 10 20
50 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. Active Region Safe Operating Area
http://onsemi.com
3



Recommended third-party BD437G Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)