MSN0310W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =10A RDS(ON) < 12mΩ @ VGS=10V RDS(ON) <16mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supp...
