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KTD2058
Silicon NPN Power Transistors
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector Power Dissipation : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type KTB1366 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ...
Inchange Semiconductor
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