2SC2983 Transistor Datasheet

2SC2983 Datasheet, PDF, Equivalent


Part Number

2SC2983

Description

Silicon NPN Power Transistor

Manufacture

Inchange Semiconductor

Total Page 4 Pages
Datasheet
Download 2SC2983 Datasheet


2SC2983
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2983
DESCRIPTION
·Excellent linearity of hFE
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High transistor frequency
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
PC Collector Power Dissipation
1.5 A
1.0 W
TJ Junction Temperature
Tstg Storage Temperature Range
150
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

2SC2983
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2983
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
VCE= 5A; IC= 500mA
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
ICBO Collector Cutoff Current
VCB= 160V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE DC Current Gain
IC= 0.1A; VCE= 5V
COB Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
MIN TYP. MAX UNIT
1.5 V
1.0 V
160 V
160 V
5V
1 uA
1 uA
70 240
25 pF
100 MHz
hFE1 Classifications
OY
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Features isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC2983 DESCRIPTION Excellent linearity of hFE ·Low colle ctor-to-emitter saturation voltage ·Fa st switching speed ·100% avalanche tes ted ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transis tor frequency ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE U NIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous PC Collect or Power Dissipation 1.5 A 1.0 W TJ J unction Temperature Tstg Storage Temper ature Range 150 ℃ -55~150 ℃ isc website:www.iscsemi.com 1 isc & isc semi is registered trademark isc Silic on NPN Power Transistor INCHANGE Semic onductor 2SC2983 ELECTRICAL CHARACTERI STICS TC=25℃ unless otherwise specifi ed SYMBOL PARAMETER CONDITIONS VCE( sat) Collector-Emitter Saturation Volta ge IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage VCE= 5.
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