MR45V200A
FEDR45V200A-01
Issue Date: Jan. 31, 2014
2M(262,144-Word 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI
GENERAL DESCRIPTION
The MR45V200A is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V200A is accessed using Serial Periphe...
