Silicon N-Channel Power MOSFET
CS6N60 A8H
○R
General Description:
CS6N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 6 85 1.4
performance and enhance the avalanche energy. The transistor
can be used in various power...