RJP30H2A IGBT Datasheet

RJP30H2A Datasheet, PDF, Equivalent


Part Number

RJP30H2A

Description

Silicon N Channel IGBT

Manufacture

Renesas

Total Page 6 Pages
Datasheet
Download RJP30H2A Datasheet


RJP30H2A
Preliminary Datasheet
RJP30H2DPK-M0 / RJP30H2A
Silicon N Channel IGBT
High speed power switching
R07DS0467EJ0200
Rev.2.00
Jun 15, 2011
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
High speed switching: tf = 100 ns typ, tf = 180 ns typ
Low leak current: ICES = 1 A max
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
C
1
23
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
www.DataSheet.co.kr
Symbol
VCES
VGES
Ic
ic(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
35
250
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/

RJP30H2A
RJP30H2DPK-M0
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Notes: 3. Pulse test.
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Min
2.5
Preliminary
Typ
1.4
1200
60
30
37
6
10
0.02
0.1
0.06
0.18
Max
1
±100
5
1.9
Unit
A
nA
V
V
pF
pF
pF
nC
nC
nC
s
s
s
s
(Ta = 25°C)
Test Conditions
VCE = 360 V, VGE = 0
VGE = ± 30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 35 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 150 V
IC = 35 A
IC = 35 A
RL = 4.5
VGE = 15 V
RG = 5
www.DataSheet.co.kr
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 2 of 6
Datasheet pdf - http://www.DataSheet4U.net/


Features Preliminary Datasheet RJP30H2DPK-M0 / R JP30H2A Silicon N Channel IGBT High spe ed power switching R07DS0467EJ0200 Rev .2.00 Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter s aturation voltage: VCE(sat) = 1.4 V typ  High speed switching: tf = 100 ns typ, tf = 180 ns typ  Low leak curre nt: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package na me: TO-3PSG) 4 C 1 23 1. Gate 2. Col lector G 3. Emitter 4. Collector (Flang e) E Absolute Maximum Ratings Item Col lector to Emitter voltage Gate to Emitt er voltage Collector current Collector peak current Collector dissipation Junc tion to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2 . Tc = 25C www.DataSheet.co.kr Symb ol VCES VGES Ic ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 ±30 35 25 0 60 2.08 150 –55 to +150 (Ta = 25° C) Unit V V A A W °C/ W °C °C R07DS0467EJ0200 Rev.2.00 Jun .
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