FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET
January 2015
FDMC86340ET80
N-Channel Shielded Gate Power Trench® MOSFET
80 V, 68 A, 6.5 mΩ
Features
General Description
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A High performan...
