IGBT. FGH30S130P Datasheet

FGH30S130P IGBT. Datasheet pdf. Equivalent

Part FGH30S130P
Description IGBT
Feature FGH30S130P — 1300 V, 30 A Shorted-anode IGBT November 2014 FGH30S130P 1300 V, 30 A Shorted-anode I.
Manufacture Fairchild Semiconductor
Datasheet
Download FGH30S130P Datasheet




FGH30S130P
November 2014
FGH30S130P
1300 V, 30 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Notes:
1: Limited by Tjmax
C
G
E
Ratings
1300
±25
60
30
90
60
30
500
250
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.3
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C5
1
www.fairchildsemi.com



FGH30S130P
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FGH30S130P
FGH30S130P
TO-247
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = 1300, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
TC = 25oC
IC = 30A, VGE = 15V,
TC = 125oC
IC = 30A, VGE = 15V,
TC = 175oC
IF = 30A, TC = 25oC
IF = 30A, TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characcteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 30A,
RG = 10, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 30A,
RG = 10, VGE = 15V,
Resistive Load, TC = 175oC
VCE = 600V, IC = 30A,
VGE = 15V
- - 1 mA
-
-
±500
nA
4.5 6.0 7.5
- 1.75 2.3
- 1.85 -
- 1.9 -
- 1.7 2.2
- 2.1 -
V
V
V
V
V
V
- 3345 -
- 75 -
- 60 -
pF
pF
pF
- 39 - ns
- 360 -
ns
- 620 -
ns
-
160 210
ns
- 1.3 - mJ
-
1.22 1.6
mJ
- 2.52 -
mJ
- 38 - ns
- 375 -
ns
- 635 -
ns
- 270 -
ns
- 1.59 -
mJ
- 1.78 -
mJ
- 3.37 -
mJ
- 372.3 -
nC
- 18.7 -
nC
- 156.2 -
nC
©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C5
2
www.fairchildsemi.com







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