N-Channel MOSFET. PK615BM6 Datasheet

PK615BM6 MOSFET. Datasheet pdf. Equivalent

Part PK615BM6
Description N-Channel MOSFET
Feature PK615BM6 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 2.6Ω @VGS = 10.
Manufacture UNIKC
Datasheet
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PK615BM6 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK615BM6 Datasheet
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PK615BM6
PK615BM6
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
2.6Ω @VGS = 10V
ID
0.37A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
0.37
0.29
2.2
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.83
0.53
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1 limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
150 °C / W
Ver 1.0
1 2012/6/26



PK615BM6
PK615BM6
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 70 °C
VDS = 5V, VGS = 10V
150
1
2.2
23
±100
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 0.3A
1.4 2.6
Forward Transconductance1
gfs
VDS = 5V, ID = 0.3A
1
DYNAMIC
Input Capacitance
Ciss
111
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
19
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 0.3A
Qgd
4.8
0.5
3.5
Turn-On Delay Time2
td(on)
14
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 75V
ID @ 0.3A, VGS = 10V, RGEN = 6Ω
12.6
104
Fall Time2
tf
52
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 1.3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2A, dIF/dt=100A/mS
48
50
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
0.37
1.5
UNIT
V
nA
mA
A
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/6/26





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