N-Channel MOSFET. PM550BA Datasheet

PM550BA MOSFET. Datasheet pdf. Equivalent

Part PM550BA
Description N-Channel MOSFET
Feature PM550BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 3Ω @VGS = 10V .
Manufacture UNIKC
Datasheet
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PM550BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PM550BA Datasheet
Recommendation Recommendation Datasheet PM550BA Datasheet





PM550BA
PM550BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
3Ω @VGS = 10V
ID
0.4A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 250
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
0.4
0.3
Pulsed Drain Current1
IDM 1.6
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.75
0.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
166 °C / W
REV 1.0
1 2014/8/29



PM550BA
PM550BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
250
1 1.9
3
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±16V
±30 uA
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V , TJ = 55 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS =5V, ID = 0.1A
VGS = 10V, ID = 0.2A
VDS = 5V, ID = 0.2A
2.3 3.2
2.2 3
2
Ω
S
DYNAMIC
Input Capacitance
Ciss
489
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
24
Reverse Transfer Capacitance
Crss
14
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 100V, VGS = 10V,
ID = 0.5A
14
2
5
Turn-On Delay Time2
td(on)
16
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 125V
ID @ 0.1A, VGS = 10V, RGEN = 6Ω
80
24
Fall Time2
tf
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = 0.2A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 1A, dlF/dt = 100 A/ms
Qrr VGS = 0V
80
102
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
0.4
1.3
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2014/8/29





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