P-Channel MOSFET. PM505BA Datasheet

PM505BA MOSFET. Datasheet pdf. Equivalent

Part PM505BA
Description P-Channel MOSFET
Feature PM505BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 40mΩ @VGS = -4..
Manufacture UNIKC
Datasheet
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PM505BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PM505BA Datasheet
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PM505BA
PM505BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
40mΩ @VGS = -4.5V
ID
-4A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-4
-3
-21
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.9
0.6
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.
MAXIMUM UNITS
126 °C / W
REV 1.0 1 2015/7/3



PM505BA
PM505BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
-20
-0.3 -0.6
-1
V
VDS = 0V, VGS = ±8V
±100 nA
VDS = -16V, VGS = 0V
VDS = -10V, VGS = 0V , TJ = 55 °C
-1
mA
-10
VGS = -1.5V, ID = -1A
67 100
VGS = -1.8V, ID = -2A
VGS = -2.5V, ID = -3.5A
50 71
40 55
Forward Transconductance1
gfs
VGS = -4.5V, ID = -3.5A
VDS = -5V, ID = -3.5A
33 40
17
S
DYNAMIC
Input Capacitance
Ciss
1157
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
106
Reverse Transfer Capacitance
Crss
76
Total Gate Charge2
Qg
11.9
Gate-Source Charge2
Qgs VDS= -10V,VGS= -4.5V,ID= -3.5A
1.6
Gate-Drain Charge2
Qgd
2.5
Turn-On Delay Time2
td(on)
22
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -10V, VGS= -4.5V
ID @ -3.5A, RG = 6Ω
20
59
Fall Time2
tf
13
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -3.5A, VGS = 0V
-0.6
-1.3
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = -3.5A, dIF/dt = 100A / mS
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
11.4 nS
2.9 nC
REV 1.0 2 2015/7/3





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