P-Channel MOSFET. P1403EV8 Datasheet

P1403EV8 MOSFET. Datasheet pdf. Equivalent

Part P1403EV8
Description P-Channel MOSFET
Feature P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
Download P1403EV8 Datasheet

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P1403EV8
P1403EV8
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
14mΩ @VGS = -10V
ID
- 12A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1 , 2
TA = 25 °C
TA = 70 °C
ID
IDM
-12
-10
-65
Avalanche Current
IAS -39
Avalanche Energy
L = 0.1mH
EAS
89
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
3
2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
40
UNITS
°C / W
Ver 1.0
1 2012/4/13



P1403EV8
P1403EV8
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
VGS = -4.5V, ID = -9A
VGS = -10V, ID = -12A
VDS = -10V, ID = -12A
-30
-1 -1.5 -3
±100
-1
-10
17.8 22
11.3 14
28
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
Reverse Transfer Capacitance
Crss
2260
410
204
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = -12A, VGS = -10V
38
7
6
Turn-On Delay Time2
td(on)
12
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -20V, ID = -10A, VGS = -10V,
RG=6Ω
16
50
Fall Time2
tf
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -10A, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-2.5
-1.2
UNIT
V
nA
mA
S
pF
Ω
nC
nS
A
V
Ver 1.0
2 2012/4/13





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