N-Channel MOSFET. P1403CV Datasheet

P1403CV MOSFET. Datasheet pdf. Equivalent

Part P1403CV
Description N-Channel MOSFET
Feature P1403CV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 14.6mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
Download P1403CV Datasheet

P1403CV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1403CV Datasheet
Recommendation Recommendation Datasheet P1403CV Datasheet





P1403CV
P1403CV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 14.6mΩ @VGS = 10V
ID
11A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±12
Continuous Drain Current1
Pulsed Drain Current2
TA = 25 °C
TA = 70 °C
ID
IDM
11
7
45
Avalanche Current
IAS 29
Avalanche Energy
L = 0.1mH
EAS
40
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2012/7/5



P1403CV
P1403CV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
Drain-Source On-State
Resistance1
RDS(ON)
Forward Transconductance1
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±12V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
VGS = 2.5V, ID = 8A
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 11A
VDS = 5V, ID = 11A
30
0.5 0.9 1.5
±100
1
10
45
21.8 26.0
13.7 16.5
11.9 14.6
35
DYNAMIC
Input Capacitance
Ciss
1290
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
210
Reverse Transfer Capacitance
Crss
125
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.55
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V
Q)gs
VDS = 0.5V(BR)DSS, ID = 11A
24
11
3
Gate-Drain Charge2
Qgd
5
Turn-On Delay Time2
td(on)
6
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 10V,
ID @ 11A, VGS = 10V, RGEN = 6Ω
7.5
50
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 11A, VGS = 0V
1.9
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 11A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
13
40
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/7/5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)