PA610NV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 100V
RDS(ON) 160mΩ @VGS =10V
-100V
200mΩ @VGS = -10V
ID 2.5A -2.2A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 100 VDS P -100
Gate-Source Voltage
N ±30 VGS P ±30
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