NP-Channel MOSFET. PA610NV Datasheet

PA610NV MOSFET. Datasheet pdf. Equivalent

Part PA610NV
Description N&P-Channel MOSFET
Feature PA610NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100V RDS(ON) 160mΩ @VGS =10V.
Manufacture UNIKC
Datasheet
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PA610NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PA610NV Datasheet
Recommendation Recommendation Datasheet PA610NV Datasheet





PA610NV
PA610NV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
100V
RDS(ON)
160mΩ @VGS =10V
-100V
200mΩ @VGS = -10V
ID
2.5A
-2.2A
Channel
N
P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 100
VDS P -100
Gate-Source Voltage
N ±30
VGS P ±30
Continuous Drain Current
TA = 25 °C
TA = 70°C
N 2.5
P -2.2
ID N 2
P -1.7
Pulsed Drain Current1
N 20
IDM P -20
Avalanche Current
N 24
IAS P -28
Avalanche Energy
L = 0.1mH
N 28
EAS P 38
Power Dissipation
TA = 25 °C
TA = 70 °C
N
2
P
PD
N
1.28
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/12/5



PA610NV
PA610NV
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
62.5 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±30V
VDS = 0V, VGS = ±30V
N 100
P -100
N 2 2.6
4
V
P -2 -3 -4
N ±100
nA
P ±100
VDS = 80V, VGS = 0V
N
1
Zero Gate Voltage Drain
Current
IDSS
VDS = -80V, VGS = 0V
VDS =80V, VGS = 0V, TJ = 55 °C
P
N
-1
mA
10
VDS = -80V, VGS = 0V, TJ = 55 °C P
-10
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
N 20
P -20
A
VGS = 7V, ID = 2A N 136 180
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -7V, ID = -1.7A
VGS = 10V, ID = 2.5A
P
N
187 220
135 160
VGS = -10V, ID = -2.2A
P
181 200
Forward Transconductance1
gfs
VDS = 10V, ID = 2.5A
N
8
S
VDS = -10V, ID = -2.2A
P
12
REV 1.0
2 2014/12/5





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