P6006HV MOSFET Datasheet

P6006HV Datasheet, PDF, Equivalent


Part Number

P6006HV

Description

Dual N-Channel Enhancement Mode MOSFET

Manufacture

UNIKC

Total Page 5 Pages
Datasheet
Download P6006HV Datasheet


P6006HV
P6006HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 60mΩ @VGS = 10V
ID
4.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
4.5
3.2
20
Avalanche Current
IAS 18
Avalanche Energy
L =0.1mH
EAS
16
Power Dissipation
TA = 25 °C
TA= 70°C
PD
2
1.28
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJL
RqJA
TYPICAL
MAXIMUM
60
62.5
UNITS
°C / W
REV 1.0
1 2014-2-27

P6006HV
P6006HV
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
60
1.0 1.8 2.5
V
±100 nA
1
mA
10
16 A
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 4.5A
VGS = 10V, ID = 4.5A
74 84
58 60
Forward Transconductance1
gfs
VDS = 10V, ID = 4.5A
20 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
560
80 pF
43
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.95 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 4.5A
Qgd
12
1.8 nC
3.6
Turn-On Delay Time2
td(on)
10
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 30V,
ID @ 1A, VGS = 10V, RGEN = 6Ω
8
nS
18
Fall Time2
tf
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
2A
Forward Voltage1
VSD IF = 4.5A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4.5A, dlF/dt = 100A / μS
85 nS
85 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014-2-27


Features P6006HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS( ON) 60V 60mΩ @VGS = 10V ID 4.5A SOP -8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/ TEST CONDITIONS SYMBOL LIMITS Drain- Source Voltage VDS 60 Gate-Source Vol tage VGS ±20 Continuous Drain Curren t Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 4.5 3.2 20 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16 Power Dissipation TA = 25 °C TA= 70°C PD 2 1.28 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THER MAL RESISTANCE RATINGS THERMAL RESISTAN CE Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum juncti on temperature. SYMBOL RqJL RqJA TYPI CAL MAXIMUM 60 62.5 UNITS °C / W RE V 1.0 1 2014-2-27 P6006HV Dual N-Chan nel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless O therwise Noted) PARAMETER SYMBOL TES T CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Br.
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