P6006HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 60mΩ @VGS = 10V
ID 4.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA= 70 °C
ID ...
