MOSFET. P1603BEX Datasheet

P1603BEX MOSFET. Datasheet pdf. Equivalent

Part P1603BEX
Description MOSFET
Feature P1603BEX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P1603BEX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1603BEX Datasheet
Recommendation Recommendation Datasheet P1603BEX Datasheet





P1603BEX
P1603BEX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 16mΩ @VGS = 10V
ID3
24A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
24
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
15
8
Pulsed Drain Current1
TA= 70 °C
IDM
6.3
60
Avalanche Current
IAS 20.5
Avalanche Energy
L = 0.1mH
EAS
21
TC = 25 °C
15
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6
1.7
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
Junction-to-Case
RqJC
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
3Package limitation current is 18A.
MAXIMUM
73
8
UNITS
°C / W
REV 1.0
1 2016/5/17



P1603BEX
P1603BEX
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 8A
VGS = 10V, ID = 8A
VDS = 10V, ID = 8A
30
1 1.5 2.5
V
±100 nA
1
mA
10
16.4 25
13.3 16
37 S
DYNAMIC
Input Capacitance
Ciss
513
Output Capacitance
Coss
VGS = 0V, VDS = 15V, f = 1MHz
94
pF
Reverse Transfer Capacitance
Crss
66
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 2.6 Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS= 10V)
Qg(VGS= 4.5V)
Qgs
VDS = 15V , ID = 8A
13
7.2
1.2
Gate-Drain Charge2
Qgd
4
Turn-On Delay Time2
td(on)
12
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD= 15V,
ID @ 8A, VGEN = 10V, RG= 6Ω
11
25
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
0.8
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8A, dlF/dt = 100A / mS
11.3
2.5
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 18A.
15
1
nC
nS
A
V
nS
nC
REV 1.0
2 2016/5/17





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