MOSFET. P2610AI Datasheet

P2610AI MOSFET. Datasheet pdf. Equivalent

Part P2610AI
Description MOSFET
Feature P2610AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
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P2610AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2610AI Datasheet
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P2610AI
P2610AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ @VGS = 10V
ID
32A
TO-251
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
TC = 25 °C
TC = 100 °C
L = 0.1mH
ID
IDM
IAS
EAS
32
20
100
53
139
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
PD
TJ, TSTG
TL
42
17
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.5
MAXIMUM
3
62.5
UNITS
°C / W
Ver 1.0
1 2012/8/22



P2610AI
P2610AI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
100
1.5 2.3 4
±250
1
10
100
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 27.5A
21 26
Forward Transconductance1
gfs
VDS = 10V, ID = 27.5A
DYNAMIC
30
Input Capacitance
Ciss
5060
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
294
Reverse Transfer Capacitance
Crss
190
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 50V, VGS = 10V,
ID = 20A
Qgd
86
25
27
Turn-On Delay Time2
td(on)
25
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 50V,
ID@ 20A, VGS = 10V, RGS = 25Ω
250
110
Fall Time2
tf
140
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
Reverse Recovery Time
trr
100
Reverse Recovery Charge
Qrr
380
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
32
1.2
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/8/22





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