MOSFET. P45N02LI Datasheet

P45N02LI MOSFET. Datasheet pdf. Equivalent

Part P45N02LI
Description MOSFET
Feature P45N02LI N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ.
Manufacture UNIKC
Datasheet
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P45N02LI
P45N02LI
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ @VGS = 10V
ID
26A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
26
16
70
13
Avalanche Energy
L = 0.1 mH
EAS
9
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
22
8.9
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty Cycle 1.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
5.6
70
UNITS
°C / W
REV 1.0
1 2014/7/30



P45N02LI
P45N02LI
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS =10V
25
1 1.6 2.5
V
±250 nA
25
mA
250
70 A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS =10V, ID = 15A
VDS = 15V, ID = 15A
21 41
14 20
30 S
DYNAMIC
Input Capacitance
Ciss
529
Output Capacitance
Coss VGS = 0V, VDS = 12.5V, f = 1MHz
100
Reverse Transfer Capacitance
Crss
76
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 12.5V, VGS = 10V,
ID = 15A
Qgd
12
2.3
3
Turn-On Delay Time2
td(on)
18
Rise Time2
Turn-Off Delay Time2
Fall Time2
tr
td(off)
tf
VDS = 12.5V, ID @ 15A,
VGS = 10V, RGS =6Ω
17
38
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dlF/dt = 100A / μS
15
6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
26
1.4
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2014/7/30





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