PRELIMINARY
APE HT-0103 High Temperature Silicon Carbide Schottky Diode
FEATURES
High temperature: Tc(max) = 225 C
1200 V / 10 A / 64 nC
Tj(max) = 225 C
AS9100:Rev. C-certified manufacturing, traceable throughout value chain
Near zero forward and reverse recovery
Extremely fast switching
High system efficiency
Hermetic seal; flux free, ...
