Schottky Diode. APEHT-0103 Datasheet

APEHT-0103 Diode. Datasheet pdf. Equivalent

Part APEHT-0103
Description High Temperature Silicon Carbide Schottky Diode
Feature PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Schottky Diode FEATURES  High temperature.
Manufacture APEI
Datasheet
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PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Sch APEHT-0103 Datasheet
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APEHT-0103
PRELIMINARY
APE HT-0103
High Temperature Silicon Carbide Schottky Diode
FEATURES
High temperature: Tc(max) = 225 C
1200 V / 10 A / 64 nC
Tj(max) = 225 C
AS9100:Rev. C-certified manufacturing, traceable throughout value chain
Near zero forward and reverse recovery
Extremely fast switching
High system efficiency
Hermetic seal; flux free, void free packaging
Backside isolation
High reliability
APPLICATIONS
Downhole tools
High efficiency converters
Motor drives
Aerospace: Military & Commercial
Smart grid/grid-tie distributed generation
TO-254
Package
AK A
Absolute Maximum Ratings1 (at Tj = 25 C unless otherwise stated)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
Condition(s)
VDC DC blocking voltage
IF
IFRM
IFSM
IF(max)
Continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Non-repetitive peak forward current
Ptot Power dissipation
Tj Operating junction temperature
Tstg Storage temperature
Visol Insulation test voltage
Tj < 160 C
Tj = 125 C, D = 0.1
Tc = 25 C, tP = 10 ms,
Rth(j-c) < 1.1 C/W
Tc = 25 C, tP = 10 µs,
Rth(j-c) < 1.1 C/W
Tj = 25 C
Tj = 100 C
Tj = 225 C
AC, 1 min.
1 Obtained from SemiSouth Laboratories, Inc. SDC10S120 Rev. 1.1 (August 2008) datasheet
2 Data verified through APEI experimentation and/or calculation
05/12/14 Rev. 1.1
AN ISO 9001:2008 & AS9100:REV. C - CERTIFIED MANUFACTURING COMPANY
Value
1200
1200
10
46
45
250
TBD2
TBD
TBD
-50 to 205
-50 to 225
TBD
Units
V
A
W
C
C
V
1



APEHT-0103
SiC Diode Electrical Characteristics1
Symbols
Parameter
VSD = VF Diode forward voltage
IR Reverse current
QC Total capacitive charge
C Total capacitance
AC, 1 s.
Condition(s)
IF = 10 A, Tj = 25 C (in TO-220)
IF = 10 A, Tj = 175 C (in TO-220)
VR = 1200 V, Tj = 25 C (on wafer)
VR = 1200 V, Tj = 175 C (in TO-220)
VR = 1200 V, IF = 10 A
diF/dt = 500 A/µs, (in TO-220)
VR = 0 V, Tj = 25 C, f = 100 kHz
VR = 300 V, Tj = 25 C, f = 100 kHz
VR = 600 V, Tj = 25 C, f = 100 kHz
PRELIMINARY
APE HT-0103
TBD V
Min.
-
-
-
-
-
-
-
Values
Typical
1.6
2.4
10
200
64
1137
42
35
Max.
1.8
2.9
100
-
-
-
-
Units
V
µA
nC
pF
Thermal Characteristics
Symbols
Parameter
Rθ(j-c)
Thermal resistance junction-case
Condition(s)
Calculated at 200 C
Min.
Values
Typical Max.
Units
TBD 1.0 C/W
Mechanical Characteristics
Symbols
Parameter
w Weight
Ms Mounting torque
Condition(s)
6-32 steel screw into an Al heat sink
Min.
Values
Typical Max.
Units
9.0 g
0.78 1.04 N-m
05/12/14 Rev. 1.1
AN ISO 9001:2008 & AS9100:REV. C - CERTIFIED MANUFACTURING COMPANY
2





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