MOS FET. MSN0880K Datasheet

MSN0880K FET. Datasheet pdf. Equivalent

MSN0880K Datasheet
Recommendation MSN0880K Datasheet
Part MSN0880K
Description N-Channel Enhancement Mode Power MOS FET
Feature MSN0880K; MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V;ID=80A@ VGS=10V; RDS.
Manufacture MORESEMI
Datasheet
Download MSN0880K Datasheet




MORESEMI MSN0880K
MSN0880K
75V(D-S) N-Channel Enhancement Mode Power MOS FET
Features
VDS=75VID=80A@ VGS=10V
RDS(ON)<8m@ VGS=10V
Special process technology for high ESD capability
Special designed for convertors and power controls
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Lead Free
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
PIN Configuration
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0880K
MSN0880K
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition : Tj=25,VDD=50V,VG=10V,L=0.3mH ,ID=62A;
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±25
80
60
320
30
170
1.13
580
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
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MORESEMI MSN0880K
MSN0880K
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
RthJC
RthJA
Value
0.88
63
Unit
/W
/W
Table 3. Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
VDS=75V,VGS=0V
75 84
1
10
V
μA
μA
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=40A
±100 nA
2 2.85
6.5
4
8
V
m
Dynamic Characteristics
Forward Transconductance
gFS
VDS=10V,ID=40A
20 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
4400
340
260
PF
PF
PF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=30V,ID=30A,
Qgs
VGS=10V
Qgd
100 nC
20 nC
30 nC
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
17.8
11.8
56
nS
nS
nS
Turn-Off Fall Time
tf
14.6 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
80 A
Pulsed Source-drain current(Body Diode)
Forward on voltage(Note 1)
Reverse Recovery Time(Note 1)
Reverse Recovery Charge(Note 1)
ISDM
VSD Tj=25,ISD=40A,VGS=0V
trr Tj=25,IF=75A,di/dt=100A/μs
Qrr
320 A
1.2 V
36 nS
56 nC
Forward Turn-on Time
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width 300μs, Duty Cycle 1.5%, RG=25, Starting Tj=25
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MORESEMI MSN0880K
Test Circuit
1) EAS Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
MSN0880K
MORE Semiconductor Company Limited
http://www.moresemi.com
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