MOS FET. MSN0880M Datasheet

MSN0880M FET. Datasheet pdf. Equivalent

MSN0880M Datasheet
Recommendation MSN0880M Datasheet
Part MSN0880M
Description N-Channel Enhancement Mode Power MOS FET
Feature MSN0880M; MSN0880M 75V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 75V,ID =80A RD.
Manufacture MORESEMI
Datasheet
Download MSN0880M Datasheet




MORESEMI MSN0880M
MSN0880M
75V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS = 75V,ID =80A
RDS(ON) <8m@ VGS=10VTyp6.5m
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Lead Free
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
PIN Configuration
Marking and pin assignment
TO-263-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0880M
MSN0880M
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID
ID (100)
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
75
±25
80
60
320
170
15
1.13
580
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/
mJ
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http://www.moresemi.com
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MORESEMI MSN0880M
MSN0880M
Thermal Characteristic
Thermal Resistance,Junction-to- Case (Note 2)
RθJc 0.88 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
75 84
--
-
1
V
μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±25V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=30A
- - ±100 nA
2 2.85
- 6.5
4
8
V
m
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=5V,ID=30A
- 60
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
4400
340
260
PF
PF
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
17.8
11.8
56
nS
nS
nS
Turn-Off Fall Time
tf
14.6 nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=30V,ID=30A,
Qgs
VGS=10V
Qgd
100 nC
20 nC
30 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=40A
- - 1.2
V
IS
--
80
A
trr Tj=25,ISD=40A,VGS=0V
Qrr Tj=25,IF=75A,di/dt=100A/μs
36 nS
56 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=50V,VG=10V,L=0.5mH, ID=62A
MORE Semiconductor Company Limited
http://www.moresemi.com
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MORESEMI MSN0880M
Test circuit
1EAS test Circuits
2Gate charge test Circuit
3Switch Time Test Circuit
MSN0880M
MORE Semiconductor Company Limited
http://www.moresemi.com
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