WFU2N65L Product Description
Silicon N-Channel MOSFET
Features
� 2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 8nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technolog...