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MDS9652E

Part Number	MDS9652E
Manufacturer	MagnaChip
Description	N-P Channel Trench MOSFET
Published	Apr 10, 2017
Detailed Description	MDS9652E– Complementary N-P Channel Trench MOSFET MDS9652E Complementary N-P Channel Trench MOSFET General Description...
Datasheet	MDS9652E PDF File

Overview

MDS9652E– Complementary N-P Channel Trench MOSFET MDS9652E Complementary N-P Channel Trench MOSFET General Description The MDS9652E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel  VDS = 30V  ID = 7.
2A @ VGS = 10V  RDS(ON) <23m @ VGS = 10V <30m @ VGS = 4.
5V P-Channel VDS = -30V ID = -6.
1A @ VGS = -10V RDS(ON) <38m @ VGS = -10V <52m @ VGS = -4.
5V Applications  Inverters  General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 4(G2) 3(S2) 2(G1) 1(S1) G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Sour...

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