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BC184 Data Sheet

Amplifier Transistors

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BC184

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC182/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating BC BC BC Symbol 182 183 184 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Contin.

BC184

Download BC184 Datasheet

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC182/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating BC BC BC Symbol 182 183 184 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 50 30 30 60 45 45 6.0 100 350 2.8 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 Watts 8.0 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristi.




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