2N3419 TRANSISTORS Datasheet

2N3419 Datasheet, PDF, Equivalent


Part Number

2N3419

Description

NPN TRANSISTORS

Manufacture

Central Semiconductor

Total Page 2 Pages
Datasheet
Download 2N3419 Datasheet


2N3419
2N3419
2N3420
2N3421
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3419, 2N3420,
and 2N3421 are silicon NPN transistors manufactured
by the epitaxial planar process, and designed for small
signal general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current (PW<1.0ms, D.C.<50%)
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N3420
85
2N3419
2N3421
125
60 80
8.0
3.0
5.0
1.0
1.0
15
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3420
SYMBOL TEST CONDITIONS
MIN MAX
ICEX
VCE=80V, VEB=0.5V
- 500
ICEX
VCE=120V, VEB=0.5V
--
ICEX
VCE=80V, VEB=0.5V, TC=150°C
- 50
ICEX
VCE=120V, VEB=0.5V, TC=150°C
--
IEBO
VEB=6.0V
- 500
IEBO
VEB=8.0V
- 10
BVCEO
IC=50mA
60 -
VCE(SAT) IC=1.0A, IB=100mA
- 0.25
VCE(SAT) IC=2.0A, IB=200mA
- 0.50
VBE(SAT) IC=1.0A, IB=100mA
0.6 1.2
VBE(SAT) IC=2.0A, IB=200mA
0.7 1.4
fT
VCE=10V, IC=100mA, f=20MHz
40 -
Cob VCB=10V, IE=0, f=1.0MHz
- 150
ton VEB(OFF)=3.7V, IC=1.0A,
- 300
toff IB1=IB2=100mA, RL=20Ω
- 1.2
2N3419
2N3421
MIN MAX
--
- 500
--
- 50
- 500
- 10
80 -
- 0.25
- 0.50
0.6 1.2
0.7 1.4
40 -
- 150
- 300
- 1.2
UNITS
V
V
V
A
A
A
W
W
°C
UNITS
nA
nA
μA
μA
nA
μA
V
V
V
V
V
MHz
pF
ns
μs
R0 (24-March 2014)

2N3419
2N3419
2N3420
2N3421
SILICON
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C)
2N3419
SYMBOL TEST CONDITIONS
MIN MAX
hFE VCE=2.0V, IC=100mA
20 -
hFE VCE=2.0V, IC=1.0A
20 60
hFE VCE=2.0V, IC=2.0A
15 -
hFE VCE=5.0V, IC=5.0A
10 -
2N3420
2N3421
MIN MAX
40 -
40 160
30 -
15 -
UNITS
TO-39 CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R0 (24-March 2014)


Features 2N3419 2N3420 2N3421 SILICON NPN TRANSIS TORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUC TOR 2N3419, 2N3420, and 2N3421 are sili con NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and s witching applications. MARKING: FULL P ART NUMBER TO-39 CASE MAXIMUM RATINGS : (TA=25°C unless otherwise noted) SYM BOL Collector-Base Voltage VCBO Coll ector-Emitter Voltage VCEO Emitter-Ba se Voltage VEBO Continuous Collector Current IC Peak Collector Current (PW <1.0ms, D.C.<50%) ICM Continuous Base Current IB Power Dissipation PD Po wer Dissipation (TC=25°C) PD Operati ng and Storage Junction Temperature TJ , Tstg 2N3420 85 2N3419 2N3421 125 6 0 80 8.0 3.0 5.0 1.0 1.0 15 -65 to +200 ELECTRICAL CHARACTERISTICS: (T A=25°C unless otherwise noted) 2N3420 SYMBOL TEST CONDITIONS MIN MAX ICEX VCE=80V, VEB=0.5V - 500 ICEX VCE=12 0V, VEB=0.5V -- ICEX VCE=80V, VEB=0.5V, TC=150°C - 50 ICE.
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