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2N1132

Part Number	2N1132
Manufacturer	TT
Description	SILICON PLANAR PNP TRANSISTOR
Published	Jun 18, 2017
Detailed Description	SILICON PLANAR PNP TRANSISTOR 2N1132 • High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small ...
Datasheet	2N1132 PDF File

Overview

SILICON PLANAR PNP TRANSISTOR 2N1132 • High Speed Switching • Hermetic TO-39 Metal package.
• Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -50V VCEO Collector – Emitter Voltage -40V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation at TA = 25°C 600mW Derate Above 25°C 3.
4mW/°C PD Total Power Dissipation at TC = 25°C 2W Derate Above 25°C 11.
4mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameter...

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