Switching Transistors. 2N2222A Datasheet

2N2222A Transistors. Datasheet pdf. Equivalent

Part 2N2222A
Description Radiation Hardened NPN Silicon Switching Transistors
Feature 2N2221A, L, UA, UB & 2N2222A, L, UA, UB Radiation Hardened NPN Silicon Switching Transistors Rev. .
Manufacture MA-COM
Datasheet
Download 2N2222A Datasheet



2N2222A
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V2
Features
Qualified to MIL-PRF-19500/255
Levels
JANSM-3K Rads (Si) JAN
JANSD-10K Rads (Si) JANTX
JANSP-30K Rads (Si) JANTXV
JANSL-50K Rads (Si) JAN
JANSR-100K Rads (Si)
TO-18 (TO-206AA), Surface mount UA & UB
Packages
Applications
Switching and Linear Applications
DC and VHF Amplifier Applications
Electrical Specifications @ TA = 25°C
Parameter
Test Conditions
Symbol Units Minimum Maximum
Off Characteristics:
Collector - Emitter Breakdown
IC = 10 mAdc
V(BR)CEO Vdc
50
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
VCB = 75 Vdc
VCB = 60 Vdc
VEB = 6.0 Vdc
VEB = 4.0 Vdc
ICBO1
ICBO2
IEBO1
IEBO2
µAdc
nAdc
µAdc
nAdc
10
10
10
10
Collector - Emitter Cutoff Current
VCE = 50 Vdc
ICES nAdc
50
On Characteristics1:
Forward Current Transfer Ratio
Collector - Base Cutoff Current
2N2221A, L, UA, UB
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10.0 mAdc, VCE = 10 Vdc
IC = 150.0 mAdc, VCE = 10 Vdc
IC = 500.0 mAdc, VCE = 10 Vdc
2N2222A, L, UA, UB
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10.0 mAdc, VCE = 10 Vdc
IC = 150.0 mAdc, VCE = 10 Vdc
IC = 500.0 mAdc, VCE = 10 Vdc
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base - Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2%.
hFE
VCE(sat) Vdc
VBE(sat) Vdc
30
35
40
40
20
50
75
100
100
30
0.6
150
120
325
11
120
0.3
1.0
1.2
2.0
1 (Continued next page)
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0011465



2N2222A
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V2
Electrical Specifications @ TA = 25°C
Parameter
Test Conditions
Symbol Units Minimum Maximum
Dynamic Characteristics:
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1 mAdc, VCE = 10 Vdc, f = 1 kHz
2N2221A, L, UA, UB
2N2222A, L, UA, UB
Magnitude of Small-Signal Short-Circuit,
Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
hfe
| hfe |
Output Capacitance
Switching Characteristics:
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO
VCB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz C1BO
pF
30
50
2.5
8
25
Turn-On Time
(See figure 17 of MIL-PRF-19500/255) TON ns
35
Turn-Off Time
(See Figure 18 of MIL-PRF-19500/255) TOFF
ns
300
Absolute Maximum Ratings @ TC = 25°C
Parameter
Collector - Emitter Voltage (VCEO)
Collector - Base Voltage (VCBO)
Emitter - Base Voltage (VEBO)
Collector Current (IC)
Total Power Dissipation (PT) TA = +25ºC
Thermal Resistance (RΘJA) Junction to Ambient
Operating Temperature
Storage Temperature
Absolute Maximum
50 Vdc
75 Vdc
6.0 Vdc
800 mAdc
0.5 W
325 ºC/W
-65°C to +200°C
-65°C to +200°C
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0011465





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