Amplifier. MMBT5089 Datasheet

MMBT5089 Datasheet PDF


Part

MMBT5089

Description

NPN General Purpose Amplifier

Manufacture

Kexin

Page 2 Pages
Datasheet
Download MMBT5089 Datasheet


MMBT5089 Datasheet
SMD Type
TransistIoCrs
NPN General Purpose Amplifier
MMBT5088,MMBT5089
Features
NPN general purpose amplifier
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Total device dissipation
Derate above 25
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
VCE0
VCBO
VEBO
IC
Tj
Tstg
PD
RèJC
RèJA
MMBT5088 MMBT5089
30 25
35 30
4.5
100
150
-55 to +150
625 350
5.0 2.8
83.3
200 357
Unit
V
V
V
mA
mW
mW/
/W
/W
www.kexin.com.cn 1

MMBT5089 Datasheet
SMD Type
TransistIoCrs
MMBT5088,MMBT5089
Electrical Characteristics Ta = 25 unless otherwise noted
Parameter
Symbol
Testconditons
Min Typ Max Unit
Collector-emitter breakdown
voltage
MMBT5088
V(BR)CEO IC = 1.0 mA, IB = 0
MMBT5089
30
V
25
MMBT5088
Collector-base breakdown voltage
V(BR)CBO IC = 100 ìA, IE = 0
MMBT5089
35
V
30
Collector-cutoff current
MMBT5088
MMBT5089
ICBO
VCB = 20 V, IE = 0
VCB = 15 V, IE = 0
50 nA
50 nA
Emitter-base cut-off current
IEBO
VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0
50 nA
100 nA
DC current gain
MMBT5088
MMBT5089
hFE IC = 100 ìA, VCE = 5.0 V
300 900
400 1200
Collector-emitter saturation voltage
VCE(sat) IC =10 mA, IB = 1.0 mA
0.5 V
Base-emitter saturation voltage
VBE(on) IC =10 mA, VCE = 5.0 V
0.8 V
Current gain - bandwidth product
fT IC = 500 ìA, VCE = 5.0mA,f = 20 MHz 50
MHz
Collector-base capacitance
Ccb VCB = 5.0 V,IE = 0, f = 100 KHz
4.0 pF
Emitter-base capacitance
Ceb VBE = 0.5 V,IC = 0, f = 100 KHz
10 pF
Small-signal current gain
MMBT5088
MMBT5089
350
hfe IC = 1.0 mA, VCE = 5.0 V, f = 1.0 KHz
450
1400
1800
Noise figure
MMBT5088
MMBT5089
NF
IC = 100 ìA, VCE = 5.0 V, Rs = 10KÙ,
f = 10 Hz to 15.7kHz
3.0 dB
2.0 dB
hFE Classification
TYPE
Marking
MMBT5088
1Q
MMBT5089
1R
2 www.kexin.com.cn


Features Datasheet pdf SMD Type TransistIoCrs NPN General Pur pose Amplifier MMBT5088,MMBT5089 Feat ures NPN general purpose amplifier +0. 12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0 -0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0 .01 1.Base 2.Emitter 3.collector Absol ute Maximum Ratings Ta = 25 Parameter C ollector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage t emperature Total device dissipation Der ate above 25 Thermal resistance, juncti on to case Thermal resistance, junction to ambient Symbol VCE0 VCBO VEBO IC T j Tstg PD RèJC RèJA MMBT5088 MMBT508 9 30 25 35 30 4.5 100 150 -55 to +150 6 25 350 5.0 2.8 83.3 200 357 Unit V V V mA mW mW/ /W /W www.kexin.com.cn 1 S MD Type TransistIoCrs MMBT5088,MMBT50 89 Electrical Characteristics Ta = 25 unless otherwise noted Parameter Symb ol Testconditons Min Typ Max Unit Co llector-emitter breakdown voltage MMBT5088 V(BR)CEO IC = 1.0 m.
Keywords MMBT5089, datasheet, pdf, Kexin, NPN, General, Purpose, Amplifier, MBT5089, BT5089, T5089, MMBT508, MMBT50, MMBT5, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)