MBRF10150CT RECTIFIERS Datasheet

MBRF10150CT Datasheet PDF, Equivalent


Part Number

MBRF10150CT

Description

SCHOTTKY BARRIER RECTIFIERS

Manufacture

LITE-ON

Total Page 3 Pages
Datasheet
Download MBRF10150CT Datasheet


MBRF10150CT
LITE-ON
SEMICONDUCTOR
MBRF10150CT thru 10200CT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 150 to 200 Volts
FORWARD CURRENT - 10 Amperes
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
ITO-220AB
B
K
PIN
1 23
G
I
HH
PIN 1
PIN 3
M
J
N
L
PIN 2
ITO-220AB
DIM. MIN. MAX.
A 15.50 16.50
B 10.0 10.40
C 3.00 3.50
D 9.00 9.30
E 2.90 3.60
F 13.46 14.22
G 1.15 1.70
H 2.40 2.70
I 0.75 1.00
J 0.45 0.70
K 3.00 3.30
L 4.36 4.77
M 2.48 2.80
N 2.50 2.80
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
CHARACTERISTICS
SYMBOL
MBRF10150CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
TC =135 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Peak Repetitive Reverse Current
tp=2us, square F=1KHz
@TJ=25 C
Voltage Rate of Change (Rated VR)
VRRM
VRMS
VDC
I(AV)
IFSM
IRRM
dv/dt
150
105
150
10
120
1
10000
Maximum Forward
Voltage (Note 1)
IF=5A @
IF=5A @
IF=10A @
IF=10A @
TJ =25 C
TJ =125 C
TJ =25 C
TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
Typical Thermal Resistance (Note 2)
VF
IR
R0JC
0.92
0.75
1.00
0.85
8
2
5.0
Typical Junction Capacitance
per element (Note 3)
CJ
Operating Junction and Storage
Temperature Range
TJ,
TSTG
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
Vdis
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 135 mm X 135 mm X 8 mm Alumium Plate Heatsink.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
120
-65 to +175
2000
MBRF10200CT
200
140
200
UNIT
V
V
V
A
A
A
V/us
V
uA
mA
C/W
pF
V
REV. 3, Oct-2010, KTHC38

MBRF10150CT
RATING AND CHARACTERISTIC CURVES
MBRF10150CT thru 10200CT
FIG.1 - FORWARD CURRENT DERATING CURVE
10.0
8.0
6.0
4.0
2.0
RESISTIVE OR INDUCTIVE LOAD
0.0
25 50 75 100 125
CASE TEMPERATURE ,
150
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
Single Half-Sine-Wave
0
12
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
TJ =125
100 10
10
TJ =75
1.0
TJ =25
1
0 20 40 60 80 100 120
REVERSE VOLTAGE , VOLTS
TJ =25
Pule Width 300us
2% Duty Cycle
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
1000
FIG.5 - TYPICAL JUNCTION CAPACITANCE
100
10
f=1MHz
TJ =25
1
0.1
1 10
REVERSE VOLTAGE , VOLTS
100


Features LITE-ON SEMICONDUCTOR MBRF10150CT thru 10200CT SCHOTTKY BARRIER RECTIFIERS R EVERSE VOLTAGE - 150 to 200 Volts FORWA RD CURRENT - 10 Amperes FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient prot ection Low power loss, high efficiency High current capability, low VF High su rge capacity Plastic package has UL fla mmability classification 94V-0 MECHANIC AL DATA Case : ITO-220AB molded plastic Polarity : As marked on the body Weigh t : 0.06 ounces, 1.70 grams Mounting po sition : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) EC D FA ITO-220AB B K PIN 1 23 G I HH PIN 1 PIN 3 M J N L PIN 2 ITO-220AB DIM. MIN. MAX. A 15. 50 16.50 B 10.0 10.40 C 3.00 3.50 D 9.0 0 9.30 E 2.90 3.60 F 13.46 14.22 G 1.15 1.70 H 2.40 2.70 I 0.75 1.00 J 0.45 0. 70 K 3.00 3.30 L 4.36 4.77 M 2.48 2.80 N 2.50 2.80 All Dimensions in millimete r MAXIMUM RATINGS AND ELECTRICAL CHARA CTERISTICS Ratings at 25℃ ambient tem perature unless otherwise specified. CHARACTERISTICS SYMBOL .
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