Voltage Transistors. BF420 Datasheet

BF420 Transistors. Datasheet pdf. Equivalent

Part BF420
Description High Voltage Transistors
Feature BF420, BF422 High Voltage Transistors NPN Silicon Features • Pb−Free Package is Available* MAXIMU.
Manufacture ON Semiconductor
Datasheet
Download BF420 Datasheet




BF420
BF420, BF422
High Voltage Transistors
NPN Silicon
Features
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol BF420 BF422 Unit
VCEO
VCBO
VEBO
IC
ICM
PD
300 250
300 250
5.0
50
100
Vdc
Vdc
Vdc
mAdc
mA
830 mW
6.6 mW/°C
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead
Symbol
RqJA
RqJL
Max
150
68
Unit
°C/W
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on a FR4 board with 200 mm2 of 1 oz copper and lead length of
5 mm.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 4
1
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
MARKING
DIAGRAM
TO−92
BF42x
CASE 29
AYWW G
STYLE 14
G
1
23
BF42x = Device Code
x = 0 or 2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BF420ZL1
TO−92
2000/Ammo Box
BF420ZL1G
BF422
BF422G
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
2000/Ammo Box
5000 Units/Box
5000 Units/Box
BF422RL1
BF422RL1G
TO−92
TO−92
(Pb−Free)
2000/Tape & Reel
2000/Tape & Reel
BF422ZL1
TO−92
2000/Ammo Pack
BF422ZL1G
TO−92
(Pb−Free)
2000/Ammo Pack
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BF420/D



BF420
BF420, BF422
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE = 20 Vdc)
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
Common Emitter Feedback Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
BF420
BF422
BF420
BF422
BF420
BF422
BF420
BF422
BF420
BF422
BF420
BF422
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cre
Min Max Unit
Vdc
300 −
250 −
Vdc
300 −
250 −
Vdc
5.0 −
5.0 −
mAdc
− 0.01
−−
nAdc
− 100
−−
50 −
50 −
Vdc
− 0.5
Vdc
− 2.0
MHz
60 −
pF
− 1.6
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