Dual High Voltage Trench MOS Barrier Schottky Rectifier
Description
VB10170C-E3, VB10170C-M3, VB10170CHM3
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Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
VB10170C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package
2x5A 170 V 80 A 0.65 V 175 °C TO-263AB
Diode...
