isc Silicon NPN Power Transistor
DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Complement to Type 2SB1353 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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