NPN transistor. MJE13005DRB Datasheet

MJE13005DRB transistor. Datasheet pdf. Equivalent

Part MJE13005DRB
Description Silicon NPN transistor
Feature .
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download MJE13005DRB Datasheet

MJE13005DRB Datasheet
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MJE13005DRB
MJE13005DRB
Rev.E May.-2016
DATA SHEET
描述 / Descriptions
TO-263 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-263 Plastic Package.

特征 / Features
耐压高,开关速度快。
High voltage capability, high speed switching.
用途 / Applications
主要用于高频电子照明电路、开关及开关电源。
High frequency electronic lighting, switching power supply applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
12
3
4
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions .
PIN 4VD
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MJE13005DRB
MJE13005DRB
Rev.E May.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
PC(Tc=25)
Tj
Tstg
DATA SHEET
数值
Rating
700
400
9.0
4.0
2.0
75
150
-55150
单位
Unit
V
V
V
A
W
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Base Cut-Off Current
Collector Cut-Off Current
Collector cut-off current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
符号
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Transition Frequency
fT
Fall time
Storage time
tf
ts
测试条件
Test Conditions
IC=1mA
IE=0
IC=10mA
IE=1mA
VCB=700V
VCE=400V
VEB=9.0V
VCE=5.0V
IB=0
IC=0
IE=0
IB=0
IC=0
IC=1.0A
IC=2.0A
IB=0.5A
IC=2.0A
VCE=10V
f=1.0MHz
IB=0.5A
IC=0.5A
VCE=5V
(UI9600)
IC=0.5A
最小值 典型值 最大值 单位
Min Typ Max Unit
700 V
400 V
9.0 V
0.1 mA
0.1 mA
0.1 mA
10 40
0.8 V
1.2 V
7.0 MHz
0.8 μs
4.0 μs
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