PNP Transistor. 2N3634 Datasheet

2N3634 Transistor. Datasheet pdf. Equivalent


SEMICOA 2N3634
Type 2N3634
Geometry TBD
Polarity PNP
Qual Level: Pending
Features:
General-purpose low-power am-
plifier transistor which operates
over a wide temperature range.
Housed in a TO-39 case.
Also will be available in chip form
using the TBD chip geometry.
The Min and Max limits shown are
per MIL-PRF-19500/357 which
Semicoa meets in all cases.
Data Sheet No. 2N3634
Generic Part Number:
2N3634
REF: MIL-PRF-19500/357
TO-39
Maximum Ratings
Rating
TC = 25oC unless otherwise specified
Symbol
Rating
Collector-Emitter Voltage
VCEO
140
Collector-Base Voltage
VCBO
140
Emitter-Base Voltage
VEBO
5.0
Collector Current, Continuous
IC 1.0
Operating Junction Temperature
TJ -65 to +200
Storage Temperature
TSTG
-65 to +200
Unit
V
V
V
A
oC
oC


2N3634 Datasheet
Recommendation 2N3634 Datasheet
Part 2N3634
Description PNP Transistor
Feature 2N3634; Type 2N3634 Geometry TBD Polarity PNP Qual Level: Pending Features: • General-purpose low-power ampl.
Manufacture SEMICOA
Datasheet
Download 2N3634 Datasheet




SEMICOA 2N3634
Data Sheet No. 2N3634
Electrical Characteristics
OFF Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Collector-Base Breakdown Voltage
IC = 10 µA
V(BR)CBO
140
Collector-Emitter Breakdown Voltage
IC = 10 mA
V(BR)CEO
140
Emitter-Base Breakdown Voltage
IE = 10 µA, pulsed
V(BR)EBO
5.0
Collector-Base Cutoff Current
VCB = 100 V
VCB = -100 V, TA = +150oC
ICBO1
ICBO2
---
---
Emitter-Base Cutoff Current
VEB = 3.0 V
IEBO ---
Collector-Emitter Cutoff Current
VCE = 100 V
ICEO ---
ON Characteristics
Forward current Transfer Ratio
IC = 0.1 mA, VCE = 10 V (pulsed)
IC = 1.0 mA, VCE = 1.0 V (pulsed)
IC = 10 mA, VCE = 10 V (pulsed)
IC = 50 mA, VCE = 10 V (pulsed)
IC = 150 mA, VCE = 10 V (pulsed)
IC = 50 mA, VCE = 10 V (pulsed), TA = -55oC
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA (pulse test)
IC = 50 mA, IB = 5 mA (pulse test)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA (pulse test)
IC = 50 mA, IB = 5 mA (pulse test)
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Min
25
45
50
50
30
25
---
---
---
0.65
Switching Characteristics
Pulse Delay Time
Per Figure 3 of MIL-S-19500/357
Pulse Rise Time
IC= 500 mA, IB1 = 50 mA, VEB = 2 V
Pulse Storage Time
IC = 500 mA, IB1 = IB2 = 50 mA
Pulse Fall Time
IC = 500 mA, IB1 = IB2 = 50 mA
t off
IC = 500 mA, IB1 = IB2 = 50 mA
Symbol
td
tr
ts
tf
toff
Min
---
---
---
---
---
Max
---
---
---
100
100
50
10
Max
---
---
---
150
---
---
0.3
0.6
0.8
0.9
Max
100
100
500
150
600
Unit
V
V
V
nA
µA
nA
µA
Unit
---
---
---
---
---
---
V dc
V dc
V dc
V dc
Unit
ns
ns
ns
ns
ns



SEMICOA 2N3634
Data Sheet No. 2N3634
Small Signal Characteristics
Short Circuit Forward Current Transfer Ratio
VCE = 30 V, IC = 30 mA, f = 100 MHz
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IC = 10 mA, f = 1 kHz
Short-Circuit Input Impedance
VCE = 10 V, IC = 10 mA, f = 1 kHz
Open-Circuit, Reverse Voltage Transfer Ratio
VCE = 10 V, IC = 10 mA, f = 1 kHz
Open Circuit Output Admittance
VCE = 10 V, IC = 10 mA, f = 1 kHz
Open Circuit Output Capacitance
VCB = 20 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 1 V, IC = 0, 100 kHz < f < 1 MHz
Noise Figure
VCE = 10 V, IC = 0.5 mA, Rg = 1 kohm
f = 100 Hz
f = 1 kHz
f = 10 kHz
Symbol
|hFE|
hFE
hIE
hRE
hoe
COBO
CIBO
NF
NF
NF
Min
1.5
40
100
---
---
---
---
---
---
---
Max
8.0
160
600
3x10-4
200
10
75
Unit
---
---
ohms
---
µS
pF
pF
5 dB
3 dB
3 dB







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