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STU40N10 Datasheet, Equivalent, Effect Transistor.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

 

 

 

Part STU40N10
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature STU40N10 Sa mHop Microelectronics C orp .
STD40N10Green Product Ver 1.
0 N-Cha nnel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VD SS ID RDS(ON) (mΩ) Max 100V 40A 20 @ VGS=10V FEATURES Super high dense cel l design for low RDS(ON).
Rugged and re liable.
TO-252 and TO-251 Package.
G S STU SERIES TO-252AA(D-PAK) G DS STD S ERIES TO-251(I-PAK) ABSOLUTE MAXIMUM R ATINGS (TC=25°C unless otherwise noted ) Symbol Parameter VDS Drain-Source V oltage VGS Gate-Source Voltage ID Dr ain Current-Continuous c TC=25°C TC=7 0°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy .
Manufacture SamHop Microelectronics
Datasheet
Download STU40N10 Datasheet
Part STU40N10
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feature STU40N10 Sa mHop Microelectronics C orp .
STD40N10Green Product Ver 1.
0 N-Cha nnel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VD SS ID RDS(ON) (mΩ) Max 100V 40A 20 @ VGS=10V FEATURES Super high dense cel l design for low RDS(ON).
Rugged and re liable.
TO-252 and TO-251 Package.
G S STU SERIES TO-252AA(D-PAK) G DS STD S ERIES TO-251(I-PAK) ABSOLUTE MAXIMUM R ATINGS (TC=25°C unless otherwise noted ) Symbol Parameter VDS Drain-Source V oltage VGS Gate-Source Voltage ID Dr ain Current-Continuous c TC=25°C TC=7 0°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy .
Manufacture SamHop Microelectronics
Datasheet
Download STU40N10 Datasheet

STU40N10

STU40N10
STU40N10

STU40N10

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