SWITCHING DIODE. BAS21W Datasheet

BAS21W DIODE. Datasheet pdf. Equivalent


JCST BAS21W
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
BAS19W/20W/21W SWITCHING DIODE
FEATURES
SOT-323
z Fast Switching Speed
z Surface Mount Package Ideally Suited for Automatic Insertion
z For General Purpose Switching Applications
z High Conductance
Marking: BAS19W
BAS20W
BAS21W
KA8
KT2
KT3
Maximum Ratings @Ta=25
1
3
2
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Thermal Resistance. Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VRRM
VR
IO
Pd
RθJA
TJ
TSTG
BAS19W
100
BAS20W
150
200
200
625
150
-55~+150
BAS21W
250
Unit
V
mA
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Symbol
Test conditions
BAS19W
BAS20W
BAS21W
V(BR)
IR= 100µA
Reverse voltage leakage current
BAS19W
BAS20W
BAS21W
Forward voltage
Diode capacitance
VR=100V
IR VR=150V
VR=200V
VF
IF=100mA
IF=200mA
CD VR=0V, f=1MHz
Reveres recovery time
trr IF=IR=30mA,Irr=0.1×IR
Min Max
100
150
250
Unit
V
0.1 µA
1
1.25
V
5 pF
50 ns
B,Apr,2012


BAS21W Datasheet
Recommendation BAS21W Datasheet
Part BAS21W
Description SWITCHING DIODE
Feature BAS21W; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAS19W/20W/21.
Manufacture JCST
Datasheet
Download BAS21W Datasheet




JCST BAS21W
Typical Characteristics
Forward Characteristics
200
100
10
1
1000
100
10
0.1 1
0.01
0.0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE V (V)
F
1.2
0.1
0.1
BAS20W
Reverse Characteristics
T =100
a
T =25
a
1 10
REVERSE VOLTAGE V (V)
R
100 150
Capacitance Characteristics Per Diode
5
T =25
a
f=1MHz
1
0.1
0 4 8 12 16 20
REVERSE VOLTAGE V (V)
R
250
200
150
100
50
0
0
Power Derating Curve
25 50 75 100
AMBIENT TEMPERATURE T ()
j
125
B,Apr,2012







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