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BAS20

NXP
Part Number BAS20
Manufacturer NXP
Description General purpose diodes
Published Mar 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS19; BAS20; BAS21 General purpose diodes Product data sheet...
Datasheet PDF File BAS20 PDF File

BAS20
BAS20

Overview
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS19; BAS20; BAS21 General purpose diodes Product data sheet Supersedes data of 1999 May 26 2003 Mar 20 NXP Semiconductors General purpose diodes Product data sheet BAS19; BAS20; BAS21 FEATURES • Small plastic SMD package • Switching speed: max.
50 ns • General application • Continuous reverse voltage: max.
100 V; 150 V; 200 V • Repetitive peak reverse voltage: max.
120 V; 200 V; 250 V • Repetitive peak forward current: max.
625 mA.
PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode APPLICATIONS • General purpose switching in e.
g.
surface mounted circuits.
handbook, halfpa2ge 1 DESCRIPTION The BAS19, BAS20 and BAS21 are general purpose diodes fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package.
MARKING TYPE NUMBER BAS19 BAS20 BAS21 MARKING CODE (1) JP∗ JR∗ JS∗ Note 1.
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
2 n.
c.
1 3 3 MAM185 Fig.
1 Simplified outline (SOT23) and symbol.
2003 Mar 20 2 NXP Semiconductors General purpose diodes Product data sheet BAS19; BAS20; BAS21 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER VRRM repetitive peak reverse voltage BAS19 BAS20 BAS21 VR continuous reverse voltage BAS19 BAS20 BAS21 IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature CONDITIONS see Fig.
2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 100 µs t = 10 ms Tamb = 25 °C; note 1 Note 1.
Device mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT − 120 V − 200 V − 250 V − 100 V − 150 V − 200 V − 200 mA − 625 mA −9A −3A − 1.
7 A − 250 mW −65 +150 °C − 150 °C 2003 Mar 20 3 NXP Semiconductors General purpose diodes Product data sheet BAS19; BAS20; BAS21 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless...


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