Leaded Schottky Barrier Rectifiers
SB120-G Thru. SB1100-G
Voltage: 20 to 100 V
Current: 1.0 A
RoHS Device
Features
-Low drop down voltage.
-Metal-Semiconductor junction with guard ring
-High surge current capability
-Silicon epitaxial planar chips.
-For use in low voltage, high efficiency inverters,
free wheeling, and polarity protection applications
-Lead-free part, meet RoHS requirements.
Comchip
SMD Diode Specialist
DO-41
.107(2.7)
.080(2.0)
1.0(25.4) Min.
.205(5.2)
.160(4.1)
Mechanical data
-Epoxy: UL94-V0 rated flame retardant
-Case: Molded plastic body DO-41
-Terminals: Solderable per MIL-STD-750 Method 2026
-Polarity: Color band denotes cathode end
-Mounting Position: Any
-Weight: 0.34grams
.034(0.86)
.028(0.70)
1.0(25.4) Min.
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at Ta=25°C unless otherwise noted.
Parameter
Symbol
SB
120-G
SB
140-G
SB
145-G
Maximum recurrent peak reverse voltage
VRRM
20
40
45
SB
150-G
50
SB
160-G
60
SB SB
180-G 1100-G
80 100
Unit
V
Maximum RMS voltage
VRMS
14
28
30
35
42
56
70
V
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=75°C, See Figure 1
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method) TL=110°C
Maximum forward voltage at 1.0A
Maximum DC reverse current TA=25°C
At rated DC blocking voltage TA=100°C
VDC
I(AV)
IFSM
VF
IR
20 40 45
0.50
10
50 60 80 100
1.0
30
0.70
0.85
0.5
5
V
A
A
V
mA
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
CJ
RθJA
RθJL
TJ
TSTG
110
-55 to +125
80
50.0
30.0
-55 to +150
-55 to +150
30
pF
°C/W
°C
°C
NOTES:
1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.
2. Thermal resistance junction to ambient and junction to lead.
QW-BB040
Comchip Technology CO., LTD.
REV:A
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