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BFR35AP

Part Number	BFR35AP
Manufacturer	Infineon Technologies AG
Description	Low Noise Silicon Bipolar RF Transistor
Published	Mar 23, 2005
Detailed Description	Low Noise Silicon Bipolar RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collecto...
Datasheet	BFR35AP PDF File

Overview

Low Noise Silicon Bipolar RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.
5mA to 20 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR35AP ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR35AP Marking Pin Configuration GEs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 93 °C Junction temperature Storage temperature VCE...

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